TY - JOUR
T1 - In-field characterization of FeTe0.8S0.2 epitaxial thin films with enhanced superconducting properties
AU - Mele, Paolo
AU - Matsumoto, Kaname
AU - Haruyama, Yasunori
AU - Mukaida, Masashi
AU - Yoshida, Yutaka
AU - Ichino, Yusuke
AU - Kiss, Takanobu
AU - Ichinose, Ataru
PY - 2010/5/4
Y1 - 2010/5/4
N2 - Epitaxial Fe-Te-S thin films (thickness range 100-200nm) were deposited by pulsed laser deposition at 400 °C on SrTiO3(100) and MgO(100) single-crystal substrates. The films reached the zero-resistance condition: Tc0 = 3.54K for on SrTiO3 and 5.37K for on MgO, and presented a large upper critical field: T for on SrTiO3 and 74.2T for on MgO, using 90% of the normal state resistance and the Werthamer-Helfand-Hohenberg model. The coherence length ξ0 is very short: 2.30nm for on SrTiO3 and 2.10nm for on MgO. The film grown on MgO showed T; then the isotropic parameter γ is 1.09. The best J c observed is 104Acm-2 (at 2K, self-field) for the sample deposited on MgO.
AB - Epitaxial Fe-Te-S thin films (thickness range 100-200nm) were deposited by pulsed laser deposition at 400 °C on SrTiO3(100) and MgO(100) single-crystal substrates. The films reached the zero-resistance condition: Tc0 = 3.54K for on SrTiO3 and 5.37K for on MgO, and presented a large upper critical field: T for on SrTiO3 and 74.2T for on MgO, using 90% of the normal state resistance and the Werthamer-Helfand-Hohenberg model. The coherence length ξ0 is very short: 2.30nm for on SrTiO3 and 2.10nm for on MgO. The film grown on MgO showed T; then the isotropic parameter γ is 1.09. The best J c observed is 104Acm-2 (at 2K, self-field) for the sample deposited on MgO.
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U2 - 10.1088/0953-2048/23/5/052001
DO - 10.1088/0953-2048/23/5/052001
M3 - Article
AN - SCOPUS:77951627912
SN - 0953-2048
VL - 23
JO - Superconductor Science and Technology
JF - Superconductor Science and Technology
IS - 5
M1 - 052001
ER -