Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires

Annop Klamchuen, Takeshi Yanagida, Masaki Kanai, Kazuki Nagashima, Keisuke Oka, Tomoji Kawai, Masaru Suzuki, Yoshiki Hidaka, Shoichi Kai

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.

Original languageEnglish
Pages (from-to)3251-3256
Number of pages6
JournalJournal of Crystal Growth
Issue number21
Publication statusPublished - Oct 15 2010

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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