Improving lifetime in MLC phase change memory using slow writes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the performance and endurance impacts of a slow-write approach for a multi-level cell (MLC) of phase change memory (PCM). An MLC improves the density of PCM, but the endurance is a critical issue. To extend the lifetime of the cell, a slow-write approach is one of the techniques that is used. However, the slow-write approach increases the program execution time because it takes a long time. In this paper, we discuss three types of slow-write approach for MLC and evaluate the endurance and performance quantitatively to understand the effectiveness of our approach. Our evaluation results show that one of the approaches enhances the endurance of MLC PCM 1.57 times with a 1.41 % performance degradation on average compared with the conventional write operation.

Original languageEnglish
Title of host publication2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages65-68
Number of pages4
ISBN (Electronic)9781538692301
DOIs
Publication statusPublished - Jul 2 2018
Event2018 Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018 - Alexandria, Egypt
Duration: Dec 17 2018Dec 19 2018

Publication series

Name2018 Proceedings of the Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018

Conference

Conference2018 Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2018
Country/TerritoryEgypt
CityAlexandria
Period12/17/1812/19/18

All Science Journal Classification (ASJC) codes

  • Computational Theory and Mathematics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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