TY - GEN
T1 - Improvement of surface resistance property of ErBa2Cu3O7-Films with BaTiO3
AU - Shingai, Y.
AU - Mukaida, M.
AU - Teranishi, R.
AU - Yamada, K.
AU - Mori, N.
AU - Ichinose, A.
AU - Kita, R.
AU - Horii, S.
AU - Yoshida, Y.
AU - Matsumoto, K.
AU - Abe, T.
AU - Saito, A.
PY - 2006
Y1 - 2006
N2 - We have improved surface resistance (RS) properties of ErBa 2Cu3O7-δ(ErBCO) films by using BaTiO 3(BTO) doping (BTO+ErBCO). The as-grown BTO+ErBCO films did not have enough carriers. We solve this problem by using O3+O2 as background gas during the growth of BTO+ErBCO films. Then, O3+O 2 gas is useful to grow BTO+ErBCO films with superior superconducting properties. The RS of a 2wt%BTO+ErBCO film is the lowest in BTO+ErBCO films grown in this study. This value is equal to that of a 1.5wt%BZO+ErBCO film. The microstructures of the 2wt%BTO+ErBCO film are observed by transmission electron microscopy (TEM). In the image, the BTO+ErBCO films did not have nanorods as the observed in BZO+ErBCO films against our expectation. However, the precipitates what BZO+ErBCO films do not have, are observed.
AB - We have improved surface resistance (RS) properties of ErBa 2Cu3O7-δ(ErBCO) films by using BaTiO 3(BTO) doping (BTO+ErBCO). The as-grown BTO+ErBCO films did not have enough carriers. We solve this problem by using O3+O2 as background gas during the growth of BTO+ErBCO films. Then, O3+O 2 gas is useful to grow BTO+ErBCO films with superior superconducting properties. The RS of a 2wt%BTO+ErBCO film is the lowest in BTO+ErBCO films grown in this study. This value is equal to that of a 1.5wt%BZO+ErBCO film. The microstructures of the 2wt%BTO+ErBCO film are observed by transmission electron microscopy (TEM). In the image, the BTO+ErBCO films did not have nanorods as the observed in BZO+ErBCO films against our expectation. However, the precipitates what BZO+ErBCO films do not have, are observed.
UR - http://www.scopus.com/inward/record.url?scp=84901704027&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84901704027&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84901704027
SN - 9781629939513
T3 - Progress in Electromagnetics Research Symposium
SP - 475
EP - 476
BT - Progress in Electromagnetics Research Symposium 2006, PIERS 2006 Tokyo
PB - Electromagnetics Academy
T2 - Progress in Electromagnetics Research Symposium 2006, PIERS 2006 Tokyo
Y2 - 2 August 2006 through 5 August 2006
ER -