Improvement of oxidation-induced Ge condensation method by H+ implantation and two-step annealing for highly stress-relaxed SiGe-on-insulator

Taizoh Sadoh, Ryo Matsuura, Masaharu Ninomiya, Masahiko Nakamae, Toyotsugu Enokida, Hiroyasu Hagino, Masanobu Miyao

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

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Material Science