Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

Taizoh Sadoh; Ryo Matsuura; Masaharu Ninomiya; Masahiko Nakamae; Toyotsugu Enokida; Hiroyasu Hagino; Masanobu Miyao

Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

Taizoh Sadoh
, Ryo Matsuura
, Masaharu Ninomiya
, Masahiko Nakamae
, Toyotsugu Enokida
, Hiroyasu Hagino
, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2357-2360
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	4
Publication status	Published - Apr 30 2005

Access to Document

http://id.ndl.go.jp/bib/7306377

Cite this

@article{3dd20217747449dcae08696a338cfb31,

title = "Improvement of Oxidation-Induced Ge Condensation Method by H\textasciicircum{}+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator",

author = "Taizoh Sadoh and Ryo Matsuura and Masaharu Ninomiya and Masahiko Nakamae and Toyotsugu Enokida and Hiroyasu Hagino and Masanobu Miyao",

year = "2005",

month = apr,

day = "30",

language = "English",

volume = "44",

pages = "2357--2360",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

AU - Sadoh, Taizoh

AU - Matsuura, Ryo

AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Enokida, Toyotsugu

AU - Hagino, Hiroyasu

AU - Miyao, Masanobu

PY - 2005/4/30

Y1 - 2005/4/30

M3 - Article

SN - 0021-4922

VL - 44

SP - 2357

EP - 2360

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 4

ER -