TY - GEN
T1 - Improvement of conductivity by incorporation of boron atoms in hydrogenated amorphous carbon films fabricated by plasma CVD methods and its electrochemical properties
AU - Naragino, Hiroshi
AU - Yoshinaga, Kohsuke
AU - Tatsuta, Seiji
AU - Honda, Kensuke
PY - 2012
Y1 - 2012
N2 - Boron-doped hydrogenated amorphous carbon thin films were synthesized with plasma-enhanced CVD method. Electrochemical properties of B-doped DLC surface that can be useful in the application as an electrochemical sensor were investigated. B-doped DLC films deposited in this study possessed a B/C ratio of 0.013 and contained sp3-bonded carbons with atomic ratio of 22/78 (sp3/sp2). The electrical resistivity was 0.9147 Ω cm. B-doped DLC thin films exhibited a wide working potential range over 3 V, low double-layer capacitance, high resistance to electrochemically induced corrosion in strong acid media, and reversible electron transfer kinetics for inorganic redox analytes (Fe(CN)63-/4- and Ru(NH 3)62+/3+, which were on the same level as those of BDD. The redox reaction of Ce3+/4+ with standard potential higher than H2O/O2 was observed due to the wider potential window.
AB - Boron-doped hydrogenated amorphous carbon thin films were synthesized with plasma-enhanced CVD method. Electrochemical properties of B-doped DLC surface that can be useful in the application as an electrochemical sensor were investigated. B-doped DLC films deposited in this study possessed a B/C ratio of 0.013 and contained sp3-bonded carbons with atomic ratio of 22/78 (sp3/sp2). The electrical resistivity was 0.9147 Ω cm. B-doped DLC thin films exhibited a wide working potential range over 3 V, low double-layer capacitance, high resistance to electrochemically induced corrosion in strong acid media, and reversible electron transfer kinetics for inorganic redox analytes (Fe(CN)63-/4- and Ru(NH 3)62+/3+, which were on the same level as those of BDD. The redox reaction of Ce3+/4+ with standard potential higher than H2O/O2 was observed due to the wider potential window.
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U2 - 10.1149/1.3687438
DO - 10.1149/1.3687438
M3 - Conference contribution
AN - SCOPUS:84879531561
SN - 9781607683100
T3 - ECS Transactions
SP - 59
EP - 68
BT - Sensors, Actuators, and Microsystems (General) - 220th ECS Meeting
T2 - Sensors, Actuators, and Microsystems General Session - 220th ECS Meeting
Y2 - 9 October 2011 through 14 October 2011
ER -