Charge trapping and dielectric breakdown (Qbd) properties of rapidly thermal gate oxynitrided (RTON) films have been studied using N2O. The gate voltage shift (ΔVG) has been used to characterize the charge trapping properties under Fowler-Nordheim electron injection from Si substrate. It is found that RTON with N2O can reduce ΔVG resulting from the reduction of trapped electrons. Oxynitridation characteristics in N2O is also discussed. Oxynitridation characteristics can not be explained as classical Deal-Grove model. Deal-Drove model is modified to fit theoretical curve to experimental data.
|Number of pages||6|
|Journal||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|Publication status||Published - Sept 1998|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Computer Science(all)