Improvement of breakdown characteristics of the gate oxynitride using N2O

Akihiro Ikeda; Chika Fujiki; Yukinori Kuroki

Improvement of breakdown characteristics of the gate oxynitride using N₂O

Akihiro Ikeda, Chika Fujiki, Yukinori Kuroki

Research output: Contribution to journal › Article › peer-review

Abstract

Charge trapping and dielectric breakdown (Q_bd) properties of rapidly thermal gate oxynitrided (RTON) films have been studied using N₂O. The gate voltage shift (ΔV_G) has been used to characterize the charge trapping properties under Fowler-Nordheim electron injection from Si substrate. It is found that RTON with N₂O can reduce ΔV_G resulting from the reduction of trapped electrons. Oxynitridation characteristics in N₂O is also discussed. Oxynitridation characteristics can not be explained as classical Deal-Grove model. Deal-Drove model is modified to fit theoretical curve to experimental data.

Original language	English
Pages (from-to)	179-184
Number of pages	6
Journal	Research Reports on Information Science and Electrical Engineering of Kyushu University
Volume	3
Issue number	2
Publication status	Published - Sept 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science(all)

Cite this

@article{f5a0a0ed5087473fb60ecd9178d4a26f,

title = "Improvement of breakdown characteristics of the gate oxynitride using N2O",

abstract = "Charge trapping and dielectric breakdown (Qbd) properties of rapidly thermal gate oxynitrided (RTON) films have been studied using N2O. The gate voltage shift (ΔVG) has been used to characterize the charge trapping properties under Fowler-Nordheim electron injection from Si substrate. It is found that RTON with N2O can reduce ΔVG resulting from the reduction of trapped electrons. Oxynitridation characteristics in N2O is also discussed. Oxynitridation characteristics can not be explained as classical Deal-Grove model. Deal-Drove model is modified to fit theoretical curve to experimental data.",

author = "Akihiro Ikeda and Chika Fujiki and Yukinori Kuroki",

year = "1998",

month = sep,

language = "English",

volume = "3",

pages = "179--184",

journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",

issn = "1342-3819",

publisher = "Kyushu University, Faculty of Science",

number = "2",

}

TY - JOUR

T1 - Improvement of breakdown characteristics of the gate oxynitride using N2O

AU - Ikeda, Akihiro

AU - Fujiki, Chika

AU - Kuroki, Yukinori

PY - 1998/9

Y1 - 1998/9

N2 - Charge trapping and dielectric breakdown (Qbd) properties of rapidly thermal gate oxynitrided (RTON) films have been studied using N2O. The gate voltage shift (ΔVG) has been used to characterize the charge trapping properties under Fowler-Nordheim electron injection from Si substrate. It is found that RTON with N2O can reduce ΔVG resulting from the reduction of trapped electrons. Oxynitridation characteristics in N2O is also discussed. Oxynitridation characteristics can not be explained as classical Deal-Grove model. Deal-Drove model is modified to fit theoretical curve to experimental data.

AB - Charge trapping and dielectric breakdown (Qbd) properties of rapidly thermal gate oxynitrided (RTON) films have been studied using N2O. The gate voltage shift (ΔVG) has been used to characterize the charge trapping properties under Fowler-Nordheim electron injection from Si substrate. It is found that RTON with N2O can reduce ΔVG resulting from the reduction of trapped electrons. Oxynitridation characteristics in N2O is also discussed. Oxynitridation characteristics can not be explained as classical Deal-Grove model. Deal-Drove model is modified to fit theoretical curve to experimental data.

UR - http://www.scopus.com/inward/record.url?scp=0032155791&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032155791&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032155791

SN - 1342-3819

VL - 3

SP - 179

EP - 184

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

IS - 2

ER -

Improvement of breakdown characteristics of the gate oxynitride using N₂O

Abstract

All Science Journal Classification (ASJC) codes

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