Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films

R. Kojima, H. Ikenoue, M. Suwa, A. Ikeda, D. Nakamura, T. Asano, T. Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


We have proposed a novel method of low-temperature nitrogen doping into 4H-SiC(0001) induced by KrF excimer laser irradiation to a SiNx film. The SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. Laser beam size on the sample surface was 300 μm×300 μm. Irradiation fluence was 1.0 J/cm2-4.0 J/cm2, and the number of shots was from 1 shot to 30 shots. Laser irradiation was performed in a vacuum chamber to avoid oxidation of the SiC surface. High concentration nitrogen doping (∼1×1021 /cm3 at the surface) and very low contact resistance with ohmic I-V characteristics can be achieved by laser ablation of the SiNx film. In the case of laser irradiation at the fluence of 2.0 J/cm2, the SiNx film was almost ablated without laser ablation of the SiC substrate. Then, excellent ohmic contact characteristics was obtained at the irradiation number of 5 shots, and it was hardly deteriorated up to 30 shots. In the case of irradiation fluence above 3.0 J/cm2, ablation of the SiC substrates was induced and ohmic contact characteristics were deteriorated with increasing the number of shots. From these results, we conclude that excellent ohmic contact characteristics without irradiation damage to SiC substrates can be obtained in a stable.

Original languageEnglish
Title of host publicationLaser 3D Manufacturing III
EditorsAlberto Pique, Bo Gu, Henry Helvajian
ISBN (Electronic)9781628419733
Publication statusPublished - 2016
EventLaser 3D Manufacturing III - San Francisco, United States
Duration: Feb 15 2016Feb 18 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherLaser 3D Manufacturing III
Country/TerritoryUnited States
CitySan Francisco

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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