TY - JOUR
T1 - Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy
AU - Inatomi, Yuya
AU - Kangawa, Yoshihiro
AU - Kakimoto, Koichi
AU - Koukitu, Akinori
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/3
Y1 - 2017/3
N2 - An improved thermodynamic analysis method for vapor-phase epitaxy is proposed. In the conventional method, the mass-balance constraint equations are expressed in terms of variations in partial pressure. Although the conventional method is appropriate for gas-solid reactions occurring near the growth surface, it is not suitable for gas reactions that involve changes in the number of gas molecules. We reconsider the constraint equations in order to predict the effect of gas reactions on semiconductor growth processes. To demonstrate the feasibility of the improved method, the growth process of group-III nitrides by metalorganic vapor-phase epitaxy has been investigated.
AB - An improved thermodynamic analysis method for vapor-phase epitaxy is proposed. In the conventional method, the mass-balance constraint equations are expressed in terms of variations in partial pressure. Although the conventional method is appropriate for gas-solid reactions occurring near the growth surface, it is not suitable for gas reactions that involve changes in the number of gas molecules. We reconsider the constraint equations in order to predict the effect of gas reactions on semiconductor growth processes. To demonstrate the feasibility of the improved method, the growth process of group-III nitrides by metalorganic vapor-phase epitaxy has been investigated.
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U2 - 10.7567/JJAP.56.038002
DO - 10.7567/JJAP.56.038002
M3 - Article
AN - SCOPUS:85014420395
SN - 0021-4922
VL - 56
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 3
M1 - 038002
ER -