Improved Oxidation-Induced Ge Condensation Technique Using H〔+〕 Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator (Special Issue: Solid State Devices & Materials)

Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)3147-3149
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number4
Publication statusPublished - Apr 2006

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