TY - JOUR
T1 - Improved organic thin-film transistor characteristics using an elevated-electrode structure
AU - Kim, Seung Kyum
AU - Shim, Chang Hoon
AU - Edura, Tomohiko
AU - Adachi, Chihaya
AU - Hattori, Reiji
N1 - Publisher Copyright:
© 2014 The Japan Society of Applied Physics.
PY - 2014/11/1
Y1 - 2014/11/1
N2 - We propose a new structure for organic thin-film transistors, denoted as "elevated-electrode structure" in which the source and drain electrodes are formed on the elevated insulation layer. Indeed, the experimental data shows that this new structure has more than twice the drain current and mobility of a conventional bottom-structured TFT, this being found to be directly related to the height of the elevated electrode. Moreover, the reproducibility of this data confirms a greater stability than that of either top-contact or bottom-contact devices.
AB - We propose a new structure for organic thin-film transistors, denoted as "elevated-electrode structure" in which the source and drain electrodes are formed on the elevated insulation layer. Indeed, the experimental data shows that this new structure has more than twice the drain current and mobility of a conventional bottom-structured TFT, this being found to be directly related to the height of the elevated electrode. Moreover, the reproducibility of this data confirms a greater stability than that of either top-contact or bottom-contact devices.
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U2 - 10.7567/JJAP.53.111601
DO - 10.7567/JJAP.53.111601
M3 - Article
AN - SCOPUS:84909942442
SN - 0021-4922
VL - 53
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 11
M1 - 111601
ER -