TY - JOUR
T1 - Improved electrical conductivity in Pr 2Ni(Cu,Ga)O 4 film with nano thickness
AU - Ishihara, Tatsumi
AU - Tominaga, Ken
AU - Hyodo, Junji
AU - Matsuka, Maki
N1 - Funding Information:
Part of this study was financially supported by Advanced Low Carbon Technology Research and Development Program (ALCA) from Ministry of Education, Culture, Sports, Science and Technology, MEXT, Japan .
PY - 2012/5
Y1 - 2012/5
N2 - Pr 1.91Ni 0.71Cu 0.24Ga 0.05O 4 (PNCG) thin film with few 100 nm thickness was prepared on polycrystalline MgO substrate with pulsed laser deposition (PLD) method. The prepared film was dense and uniform, and formation of Pr 2NiO 4 phase was observed after a post annealing treatment. Electrical conductivity was significantly changed in the film and increase in conductivity was observed when the film thickness was 320 nm. However, the conductivity decreased with decreasing the film thickness less than 300 nm and Hall coefficient measurements suggested that the electronic hole concentration increased, however its mobility decreased in PNCG film because of the expanded lattice. Increased conductivity in the PNCG film with 320 nm could be explained by the increased amount of electronic hole and its high mobility. XPS measurement also showed that Pr and Ni were an oxidized state comparing with that in bulk and so excess oxygen may be introduced in the PNCG thin film by charge compensation.
AB - Pr 1.91Ni 0.71Cu 0.24Ga 0.05O 4 (PNCG) thin film with few 100 nm thickness was prepared on polycrystalline MgO substrate with pulsed laser deposition (PLD) method. The prepared film was dense and uniform, and formation of Pr 2NiO 4 phase was observed after a post annealing treatment. Electrical conductivity was significantly changed in the film and increase in conductivity was observed when the film thickness was 320 nm. However, the conductivity decreased with decreasing the film thickness less than 300 nm and Hall coefficient measurements suggested that the electronic hole concentration increased, however its mobility decreased in PNCG film because of the expanded lattice. Increased conductivity in the PNCG film with 320 nm could be explained by the increased amount of electronic hole and its high mobility. XPS measurement also showed that Pr and Ni were an oxidized state comparing with that in bulk and so excess oxygen may be introduced in the PNCG thin film by charge compensation.
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U2 - 10.1016/j.ijhydene.2011.12.026
DO - 10.1016/j.ijhydene.2011.12.026
M3 - Article
AN - SCOPUS:84860292614
SN - 0360-3199
VL - 37
SP - 8066
EP - 8072
JO - International Journal of Hydrogen Energy
JF - International Journal of Hydrogen Energy
IS - 9
ER -
