Improved electrical conductivity in Pr 2Ni(Cu,Ga)O 4 film with nano thickness

Tatsumi Ishihara, Ken Tominaga, Junji Hyodo, Maki Matsuka

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Pr 1.91Ni 0.71Cu 0.24Ga 0.05O 4 (PNCG) thin film with few 100 nm thickness was prepared on polycrystalline MgO substrate with pulsed laser deposition (PLD) method. The prepared film was dense and uniform, and formation of Pr 2NiO 4 phase was observed after a post annealing treatment. Electrical conductivity was significantly changed in the film and increase in conductivity was observed when the film thickness was 320 nm. However, the conductivity decreased with decreasing the film thickness less than 300 nm and Hall coefficient measurements suggested that the electronic hole concentration increased, however its mobility decreased in PNCG film because of the expanded lattice. Increased conductivity in the PNCG film with 320 nm could be explained by the increased amount of electronic hole and its high mobility. XPS measurement also showed that Pr and Ni were an oxidized state comparing with that in bulk and so excess oxygen may be introduced in the PNCG thin film by charge compensation.

Original languageEnglish
Pages (from-to)8066-8072
Number of pages7
JournalInternational Journal of Hydrogen Energy
Issue number9
Publication statusPublished - May 2012

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology


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