Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

Xiangsheng Gong; Chang Xu; Taizoh Sadoh

doi:10.23919/AM-FPD.2019.8830601

Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

Xiangsheng Gong, Chang Xu, Taizoh Sadoh

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm²/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).

Original language	English
Title of host publication	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784990875374
DOIs	https://doi.org/10.23919/AM-FPD.2019.8830601
Publication status	Published - Jul 2019
Event	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 - Kyoto, Japan Duration: Jul 2 2019 → Jul 5 2019

Publication series

Name	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
Country/Territory	Japan
City	Kyoto
Period	7/2/19 → 7/5/19

All Science Journal Classification (ASJC) codes

Computer Graphics and Computer-Aided Design
Media Technology
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.23919/AM-FPD.2019.8830601

Cite this

Gong, X., Xu, C., & Sadoh, T. (2019). Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings Article 8830601 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2019.8830601

Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. / Gong, Xiangsheng; Xu, Chang; Sadoh, Taizoh.
AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8830601 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gong, X, Xu, C & Sadoh, T 2019, Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. in AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8830601, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019, Kyoto, Japan, 7/2/19. https://doi.org/10.23919/AM-FPD.2019.8830601

Gong X, Xu C, Sadoh T. Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8830601. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). doi: 10.23919/AM-FPD.2019.8830601

Gong, Xiangsheng ; Xu, Chang ; Sadoh, Taizoh. / Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

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title = "Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation",

abstract = "High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).",

author = "Xiangsheng Gong and Chang Xu and Taizoh Sadoh",

year = "2019",

month = jul,

doi = "10.23919/AM-FPD.2019.8830601",

language = "English",

series = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",

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N2 - High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).

AB - High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).

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Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

Abstract

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All Science Journal Classification (ASJC) codes

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