TY - GEN
T1 - Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤50 nm) by Interface-Modulated Solid-Phase Crystallization Combined with Thinning
AU - Chiyozono, Masanori
AU - Gong, Xiangsheng
AU - Sadoh, Taizoh
N1 - Publisher Copyright:
© 2020 FTFMD.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/9
Y1 - 2020/9
N2 - A technique to obtain high carrier mobility of Sn-doped Ge thin-films (thickness ≤50 nm) on insulator is proposed. The carrier mobilities of Ge films grown by interface-modulated solid-phase crystallization decrease with decreasing deposition thickness. From crystal structure analysis, it is revealed that decrease in the grain sizes with decreasing deposition thickness causes the decrease of the mobilities. To solve this problem, we propose thinning of grown films (deposition thickness: 50 nm) by etching. This achieves high carrier mobility (170 cm2/Vs) even for thin-films (thickness: 20 nm). This technique will be useful to realize advanced fully-depleted devices for next-generation electronics.
AB - A technique to obtain high carrier mobility of Sn-doped Ge thin-films (thickness ≤50 nm) on insulator is proposed. The carrier mobilities of Ge films grown by interface-modulated solid-phase crystallization decrease with decreasing deposition thickness. From crystal structure analysis, it is revealed that decrease in the grain sizes with decreasing deposition thickness causes the decrease of the mobilities. To solve this problem, we propose thinning of grown films (deposition thickness: 50 nm) by etching. This achieves high carrier mobility (170 cm2/Vs) even for thin-films (thickness: 20 nm). This technique will be useful to realize advanced fully-depleted devices for next-generation electronics.
UR - http://www.scopus.com/inward/record.url?scp=85096990697&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85096990697&partnerID=8YFLogxK
U2 - 10.23919/AM-FPD49417.2020.9224510
DO - 10.23919/AM-FPD49417.2020.9224510
M3 - Conference contribution
AN - SCOPUS:85096990697
T3 - Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
SP - 75
EP - 76
BT - Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2020
Y2 - 1 September 2020 through 4 September 2020
ER -