TY - JOUR
T1 - Impact of semiconductor on diamond structure for power supply on chip applications
AU - Nakagawa, Kentaro
AU - Kodama, Takuya
AU - Matsumoto, Satoshi
AU - Yamada, Takatoshi
AU - Hasegawa, Masataka
AU - Nishizawa, Shinichi
PY - 2014/4
Y1 - 2014/4
N2 - In this study, we assessed a semiconductor (silicon or GaN)-on-diamond (SeOD) structure and compared it with a conventional silicon on insulator (SOI) structure, i.e., diamond, for power-supply-on-chip (power-SoC) applications by numerical simulations. The SeOD structure has thermal advantages over the conventional SOI structure without degrading electrical characteristics even using a thin diamond film (0.3 μm).
AB - In this study, we assessed a semiconductor (silicon or GaN)-on-diamond (SeOD) structure and compared it with a conventional silicon on insulator (SOI) structure, i.e., diamond, for power-supply-on-chip (power-SoC) applications by numerical simulations. The SeOD structure has thermal advantages over the conventional SOI structure without degrading electrical characteristics even using a thin diamond film (0.3 μm).
UR - http://www.scopus.com/inward/record.url?scp=84903270530&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903270530&partnerID=8YFLogxK
U2 - 10.7567/JJAP.53.04EP16
DO - 10.7567/JJAP.53.04EP16
M3 - Article
AN - SCOPUS:84903270530
SN - 0021-4922
VL - 53
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4 SPEC. ISSUE
M1 - 04EP16
ER -