TY - JOUR
T1 - Impact of Irradiation Side on Neutron-Induced Single-Event Upsets in 65-nm Bulk SRAMs
AU - Abe, Shinichiro
AU - Liao, Wang
AU - Manabe, Seiya
AU - Sato, Tatsuhiko
AU - Hashimoto, Masanori
AU - Watanabe, Yukinobu
N1 - Funding Information:
Manuscript received January 9, 2019; accepted February 25, 2019. Date of publication February 28, 2019; date of current version July 16, 2019. This work was supported by the Japan Science and Technology Agency through the Program on Open Innovation Platform with Enterprises, Research Institute, and Academia. S. Abe and T. Sato are with Japan Atomic Energy Agency, Ibaraki 319-1195, Japan (e-mail: abe.shinichiro@jaea.go.jp). W. Liao and M. Hashimoto are with the Department of Information System Engineering, Osaka University, Osaka 565-0871, Japan. S. Manabe and Y. Watanabe are with the Department of Advanced Energy Engineering Science, Kyushu University, Fukuoka 816-8580, Japan. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2019.2902176
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2019/7
Y1 - 2019/7
N2 - The impact of the irradiation side on the cross sections of single-event upsets (SEUs) induced by neutrons was investigated by performing neutron irradiation measurements and simulations. A test board equipped with 65-nm bulk 6-T CMOS static random access memories was irradiated by quasi-monoenergetic neutrons, and the number of SEUs was counted. The number of SEUs obtained by the board-side irradiation was approximately 20% to 30% smaller than that obtained by irradiation on the plastic package side. We also investigated the impact of irradiation side on the soft error rates (SERs) obtained with by the terrestrial neutron energy spectrum via a Monte Carlo simulation. The SER obtained from the plastic package side irradiation was approximately twice that obtained for the board side irradiation, indicating that SERs can be reduced by equipping the device with the package side facing downward. Additionally, based on the simulation, the atomic composition of the material placed in front of the memory chip has a considerable influence on the SER because production yields and angular distributions of secondary H and He ions (the main causes of SEUs) depend on the composition. In particular, the existence of hydrides, such as plastic, considerably increases the SER because of the higher production yields of secondary H ions that are generated via elastic scattering of neutrons with hydrogen atoms.
AB - The impact of the irradiation side on the cross sections of single-event upsets (SEUs) induced by neutrons was investigated by performing neutron irradiation measurements and simulations. A test board equipped with 65-nm bulk 6-T CMOS static random access memories was irradiated by quasi-monoenergetic neutrons, and the number of SEUs was counted. The number of SEUs obtained by the board-side irradiation was approximately 20% to 30% smaller than that obtained by irradiation on the plastic package side. We also investigated the impact of irradiation side on the soft error rates (SERs) obtained with by the terrestrial neutron energy spectrum via a Monte Carlo simulation. The SER obtained from the plastic package side irradiation was approximately twice that obtained for the board side irradiation, indicating that SERs can be reduced by equipping the device with the package side facing downward. Additionally, based on the simulation, the atomic composition of the material placed in front of the memory chip has a considerable influence on the SER because production yields and angular distributions of secondary H and He ions (the main causes of SEUs) depend on the composition. In particular, the existence of hydrides, such as plastic, considerably increases the SER because of the higher production yields of secondary H ions that are generated via elastic scattering of neutrons with hydrogen atoms.
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U2 - 10.1109/TNS.2019.2902176
DO - 10.1109/TNS.2019.2902176
M3 - Article
AN - SCOPUS:85069452335
SN - 0018-9499
VL - 66
SP - 1374
EP - 1380
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 7
M1 - 8654696
ER -