Identification of surface atoms of LiGaO2(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy

Takao Ishii; Masashi Mukaida; Takaharu Nishihara; Shigeki Hayashi; Makoto Shinohara

doi:10.1143/jjap.37.l672

Identification of surface atoms of LiGaO₂(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy

Takao Ishii, Masashi Mukaida, Takaharu Nishihara, Shigeki Hayashi, Makoto Shinohara

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Terminating surface atoms of LiGaO₂(001) substrate for GaN thin film growth have been directly identified by coaxial impact collision ion scattering spectroscopy (CAICISS). We found that the terminating atoms of the easily etched surface of the substrate are oxygen and that those of the hardly etched surface are metal (Li and Ga). The relation is explained by the surface bonding model of the wurtzite-type A_II-B_IV compound. GaN thin films grew epitaxially only on the metal surface of the substrate.

Original language	English
Pages (from-to)	L672-L674
Journal	Japanese Journal of Applied Physics
Volume	37
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.37.l672
Publication status	Published - 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.37.l672

Cite this

@article{d59b2d998b6c4aa7bf0870795321148c,

title = "Identification of surface atoms of LiGaO2(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy",

abstract = "Terminating surface atoms of LiGaO2(001) substrate for GaN thin film growth have been directly identified by coaxial impact collision ion scattering spectroscopy (CAICISS). We found that the terminating atoms of the easily etched surface of the substrate are oxygen and that those of the hardly etched surface are metal (Li and Ga). The relation is explained by the surface bonding model of the wurtzite-type AII-BIV compound. GaN thin films grew epitaxially only on the metal surface of the substrate.",

author = "Takao Ishii and Masashi Mukaida and Takaharu Nishihara and Shigeki Hayashi and Makoto Shinohara",

year = "1998",

doi = "10.1143/jjap.37.l672",

language = "English",

volume = "37",

pages = "L672--L674",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "6 A",

}

TY - JOUR

T1 - Identification of surface atoms of LiGaO2(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy

AU - Ishii, Takao

AU - Mukaida, Masashi

AU - Nishihara, Takaharu

AU - Hayashi, Shigeki

AU - Shinohara, Makoto

PY - 1998

Y1 - 1998

N2 - Terminating surface atoms of LiGaO2(001) substrate for GaN thin film growth have been directly identified by coaxial impact collision ion scattering spectroscopy (CAICISS). We found that the terminating atoms of the easily etched surface of the substrate are oxygen and that those of the hardly etched surface are metal (Li and Ga). The relation is explained by the surface bonding model of the wurtzite-type AII-BIV compound. GaN thin films grew epitaxially only on the metal surface of the substrate.

AB - Terminating surface atoms of LiGaO2(001) substrate for GaN thin film growth have been directly identified by coaxial impact collision ion scattering spectroscopy (CAICISS). We found that the terminating atoms of the easily etched surface of the substrate are oxygen and that those of the hardly etched surface are metal (Li and Ga). The relation is explained by the surface bonding model of the wurtzite-type AII-BIV compound. GaN thin films grew epitaxially only on the metal surface of the substrate.

UR - http://www.scopus.com/inward/record.url?scp=0032090209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032090209&partnerID=8YFLogxK

U2 - 10.1143/jjap.37.l672

DO - 10.1143/jjap.37.l672

M3 - Article

AN - SCOPUS:0032090209

SN - 0021-4922

VL - 37

SP - L672-L674

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

ER -

Identification of surface atoms of LiGaO₂(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this