Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

Masafumi Inaba; Tsubasa Muta; Mikinori Kobayashi; Toshiki Saito; Masanobu Shibata; Daisuke Matsumura; Takuya Kudo; Atsushi Hiraiwa; Hiroshi Kawarada

doi:10.1063/1.4958889

Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

Masafumi Inaba, Tsubasa Muta, Mikinori Kobayashi, Toshiki Saito, Masanobu Shibata, Daisuke Matsumura, Takuya Kudo, Atsushi Hiraiwa, Hiroshi Kawarada

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al₂O₃. Using Al₂O₃ as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

Original language	English
Article number	033503
Journal	Applied Physics Letters
Volume	109
Issue number	3
DOIs	https://doi.org/10.1063/1.4958889
Publication status	Published - Jul 18 2016
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4958889

Cite this

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title = "Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate",

abstract = "The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.",

author = "Masafumi Inaba and Tsubasa Muta and Mikinori Kobayashi and Toshiki Saito and Masanobu Shibata and Daisuke Matsumura and Takuya Kudo and Atsushi Hiraiwa and Hiroshi Kawarada",

note = "Funding Information: This study was supported by a Grant-in-Aid for Fundamental Research S (26220903, JSPS) and a grant from Mitsubishi Materials Corporation in Japan. We thank The Institute for Nanoscience and Nanotechnology at Waseda University for the use of equipment. Publisher Copyright: {\textcopyright} 2016 Author(s).",

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doi = "10.1063/1.4958889",

language = "English",

volume = "109",

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T1 - Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

AU - Inaba, Masafumi

AU - Muta, Tsubasa

AU - Kobayashi, Mikinori

AU - Saito, Toshiki

AU - Shibata, Masanobu

AU - Matsumura, Daisuke

AU - Kudo, Takuya

AU - Hiraiwa, Atsushi

AU - Kawarada, Hiroshi

N1 - Funding Information: This study was supported by a Grant-in-Aid for Fundamental Research S (26220903, JSPS) and a grant from Mitsubishi Materials Corporation in Japan. We thank The Institute for Nanoscience and Nanotechnology at Waseda University for the use of equipment. Publisher Copyright: © 2016 Author(s).

PY - 2016/7/18

Y1 - 2016/7/18

N2 - The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

AB - The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

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JF - Applied Physics Letters

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M1 - 033503

ER -

Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

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