TY - JOUR
T1 - Hybrid effect study of PAD-conditioning/slurry-supply by high-pressure-micro-jet (HPMJ) method during CMP process
AU - Wang, Chengwu
AU - Doi, Toshiro
AU - Miyachi, Keiji
AU - Tsukamoto, Keiichi
AU - Miyashita, Tadakazu
AU - Kurokawa, Syuhei
AU - Fan, Li
AU - Zhang, Yu
AU - Hang, Wei
N1 - Funding Information:
This study was supported by the project [Development of ultra-precision machining process technology for functional materials related to Opto-mechatronics] implemented by Prof. Toshiro Toi in Global Innovation Center of Kyushu University. This study was also financially supported by Zhejiang Provincial Natural Science Foundation of China No. LY18E050010, National Natural Science Foundation of China No. 51605129 and National Social Science Foundation No. 17BGL086. National Key R&D Program of China No. 2018YFE0199100. The authors also acknowledge the following researchers for their supports: Zhe Wu (Hefei University of Technology), Weifeng Yao (Shaoxing University), Wei Zhang (Zhejiang Normal University), Gang Li (Zhejiang Normal University).
Funding Information:
This study was supported by the project [Development of ultraprecision machining process technology for functional materials related to Opto-mechatronics] implemented by Prof. Toshiro Toi in Global Innovation Center of Kyushu University. This study was also financially supported by Zhejiang Provincial Natural Science Foundation of China No. LY18E050010, National Natural Science Foundation of China No. 51605129 and National Social Science Foundation No. 17BGL086. National Key R&D Program of China No. 2018YFE0199100. The authors also acknowledge the following researchers for their supports: Zhe Wu (Hefei University of Technology), Weifeng Yao (Shaoxing University), Wei Zhang (Zhejiang Normal University), Gang Li (Zhejiang Normal University).
Publisher Copyright:
© 2020 The Electrochemical Society (“ECS”).
PY - 2020/3/9
Y1 - 2020/3/9
N2 - Surface clogging of polishing pad is inevitable during CMP (Chemical Mechanical Polishing) process of semiconductor wafers. In this paper, a novel slurry-feeding system utilizing HPMJ (High Pressure Micro Jet) apparatus was presented as in situ conditioning for CMP process. Clogging of pad surface can be greatly removed; the surface damage of polishing pad can also be extremely reduced by this new method. The experimental results exhibited that the material remove rate (MRR) of HPMJ method was almost constant value 100 μm h–1. However, the MRR value of conventional slurry-dripping method was about 50 μm h–1. On the other hand, surface roughness Ra changed both in hybrid HPMJ method and conventional slurry-dripping method after long-time continuous CMP process, the average Ra of hybrid HPMJ method was about 30% smaller than that of conventional slurry-dripping method, indicating that better surface quality could be obtained by HPMJ method polishing. It was demonstrated that HPMJ method showed higher MRR and lower surface roughness Ra for polishing process. HPMJ hybrid system mentioned in this study can also be applied to the polishing process of hard-to-process wide bandgap semiconductor substrate materials, such as SiC or GaN.
AB - Surface clogging of polishing pad is inevitable during CMP (Chemical Mechanical Polishing) process of semiconductor wafers. In this paper, a novel slurry-feeding system utilizing HPMJ (High Pressure Micro Jet) apparatus was presented as in situ conditioning for CMP process. Clogging of pad surface can be greatly removed; the surface damage of polishing pad can also be extremely reduced by this new method. The experimental results exhibited that the material remove rate (MRR) of HPMJ method was almost constant value 100 μm h–1. However, the MRR value of conventional slurry-dripping method was about 50 μm h–1. On the other hand, surface roughness Ra changed both in hybrid HPMJ method and conventional slurry-dripping method after long-time continuous CMP process, the average Ra of hybrid HPMJ method was about 30% smaller than that of conventional slurry-dripping method, indicating that better surface quality could be obtained by HPMJ method polishing. It was demonstrated that HPMJ method showed higher MRR and lower surface roughness Ra for polishing process. HPMJ hybrid system mentioned in this study can also be applied to the polishing process of hard-to-process wide bandgap semiconductor substrate materials, such as SiC or GaN.
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U2 - 10.1149/2162-8777/ab7a0d/pdf
DO - 10.1149/2162-8777/ab7a0d/pdf
M3 - Article
AN - SCOPUS:85081719006
SN - 2162-8769
VL - 9
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 3
M1 - ab7a0d
ER -