TY - JOUR
T1 - HVEM observation of crack tip dislocations in silicon crystals
AU - Higashida, K.
AU - Kawamura, T.
AU - Morikawa, T.
AU - Miura, Y.
AU - Narita, N.
AU - Onodera, R.
N1 - Funding Information:
The authors wish to thank Y. Hideshima for his help during the course of the specimen preparation. The work was supported in part by a Grant-in Aid for General Scientific Research from the Ministry of Education.
PY - 2001/12
Y1 - 2001/12
N2 - Dislocation configurations near the tip of a crack in Si crystals has been investigated by using a high voltage electron microscope (HVEM). A (1̄10) crack was introduced into a (001) silicon wafer by using indentation method at room temperature, and the specimen was annealed at 823 K to emit dislocations from the tip of the crack under the presence of residual stress due to the indentation. An array of dislocations was seen not only in front of the crack tip but also in the crack wake. The dislocations were emitted on the (11̄1) plane which is oblique to the (1̄10) crack. The effect of crack tip shielding due to the dislocations is analyzed to be mainly mode I. Dense dislocation region is also found near the tip, suggesting the occurrence of dislocation multiplication around the crack tip.
AB - Dislocation configurations near the tip of a crack in Si crystals has been investigated by using a high voltage electron microscope (HVEM). A (1̄10) crack was introduced into a (001) silicon wafer by using indentation method at room temperature, and the specimen was annealed at 823 K to emit dislocations from the tip of the crack under the presence of residual stress due to the indentation. An array of dislocations was seen not only in front of the crack tip but also in the crack wake. The dislocations were emitted on the (11̄1) plane which is oblique to the (1̄10) crack. The effect of crack tip shielding due to the dislocations is analyzed to be mainly mode I. Dense dislocation region is also found near the tip, suggesting the occurrence of dislocation multiplication around the crack tip.
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U2 - 10.1016/S0921-5093(01)00957-1
DO - 10.1016/S0921-5093(01)00957-1
M3 - Article
AN - SCOPUS:0035706653
SN - 0921-5093
VL - 319-321
SP - 683
EP - 686
JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
ER -