Homoepitaxial growth of diamond single-phase thin films by pulsed laser ablation of graphite

Tsuyoshi Yoshitake; Takashi Nishiyama; Kunihito Nagayama

doi:10.1143/jjap.40.l573

Homoepitaxial growth of diamond single-phase thin films by pulsed laser ablation of graphite

Tsuyoshi Yoshitake, Takashi Nishiyama, Kunihito Nagayama

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of 5 × 10^-2 Torr can etch the sp² bonding fractions preferentially. At substrate temperatures between 550°C and 600°C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. The results demonstrated that the diamond thin films can be homo-grown using PLD by the optimization of the deposition parameters such as the oxygen pressure and the substrate temperature.

Original language	English
Pages (from-to)	L573-L575
Journal	Japanese Journal of Applied Physics
Volume	40
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.40.l573
Publication status	Published - Jun 1 2001

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 600°C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. The results demonstrated that the diamond thin films can be homo-grown using PLD by the optimization of the deposition parameters such as the oxygen pressure and the substrate temperature.",

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AU - Yoshitake, Tsuyoshi

AU - Nishiyama, Takashi

AU - Nagayama, Kunihito

PY - 2001/6/1

Y1 - 2001/6/1

N2 - Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 600°C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. The results demonstrated that the diamond thin films can be homo-grown using PLD by the optimization of the deposition parameters such as the oxygen pressure and the substrate temperature.

AB - Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 600°C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. The results demonstrated that the diamond thin films can be homo-grown using PLD by the optimization of the deposition parameters such as the oxygen pressure and the substrate temperature.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

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Homoepitaxial growth of diamond single-phase thin films by pulsed laser ablation of graphite

Abstract

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