Homoepitaxial growth of 4H-SiC thin film below 1000°C by microwave plasma chemical vapor deposition

Microwave plasma chemical vapor deposition was performed aiming at low temperature homoepitaxial growth of 4H-SiC thin films. The growth rate of the deposited film depended strongly on the SiH₄ flow rate, and a smooth surface could not obtained at high SiH₄ flow rate. The surface morphology was also affected by the C/Si ratio. A high C/Si ratio was required to obtain smooth SiC films. Single crystalline 4H-SiC film growth has been achieved at a temperature as low as 970°C by growing under very high C/Si ratio (C/Si = 175) with a very low SiH₄ flow rate (0.004sccm).