TY - JOUR
T1 - Homoepitaxial diamond chemical vapor deposition for ultra-light doping
AU - Teraji, T.
AU - Isoya, J.
AU - Watanabe, K.
AU - Koizumi, S.
AU - Koide, Y.
N1 - Funding Information:
Type-IIa diamond substrates used for this study were supplied by Dr. Hitoshi Sumiya of Sumitomo Electric Industries, Ltd. Microbeam implantation of nitrogen was conducted by Dr. Shinobu Onoda and Dr. Takeshi Ohshima of the National Institutes for Quantum and Radiological Science and Technology. CFM measurements were supported by Dr. Takashi Yamamoto, Dr. Liam P. McGuinness and Prof. Fedor Jelezko of Ulm University. This work was partly supported by Grants-in-Aid for Scientific Research from the Japan Society for the Promotion of Science, Japan (Nos. 26220903, 26246001, 15H03980, and 16H06326) and the Strategic International Cooperative Program (Nanoelectronics) from the Japan Science and Technology Agency.
Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Homoepitaxial diamond films were grown by chemical vapor deposition using ultrahigh vacuum (UHV)-compatible deposition systems. Optimized growth conditions with oxygen added to the source gas enabled long-duration homoepitaxial diamond growth without formation of non-epitaxial crystallites. Under these conditions, unintentionally incorporated nitrogen was suppressed well below 1011 cm-3. By adding silicon or boron during growth with their ratio to carbon of below 1 ppb, formation of single SiV color center in homoepitaxial diamond and deposition of lightly doped p-layer was achieved with the concentration of 1015 cm-3.
AB - Homoepitaxial diamond films were grown by chemical vapor deposition using ultrahigh vacuum (UHV)-compatible deposition systems. Optimized growth conditions with oxygen added to the source gas enabled long-duration homoepitaxial diamond growth without formation of non-epitaxial crystallites. Under these conditions, unintentionally incorporated nitrogen was suppressed well below 1011 cm-3. By adding silicon or boron during growth with their ratio to carbon of below 1 ppb, formation of single SiV color center in homoepitaxial diamond and deposition of lightly doped p-layer was achieved with the concentration of 1015 cm-3.
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U2 - 10.1016/j.mssp.2016.11.012
DO - 10.1016/j.mssp.2016.11.012
M3 - Article
AN - SCOPUS:85007240848
SN - 1369-8001
VL - 70
SP - 197
EP - 202
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -