TY - JOUR
T1 - HiSIM-GaN
T2 - Compact Model for GaN-HEMT with Accurate Dynamic Current-Collapse Reproduction
AU - Okada, Yasuhiro
AU - Mizoguchi, Takeshi
AU - Tanimoto, Yuta
AU - Kikuchihara, Hideyuki
AU - Naka, Toshiyuki
AU - Saito, Wataru
AU - Miura-Mattausch, Mitiko
AU - Mattausch, Hans Juergen
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2019/1
Y1 - 2019/1
N2 - The compact model of HIroshima-University Starc Igfet Model (HiSIM)-GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. The model considers all possible charges induced within the device, including the dynamically varying trap density. It is verified that the model can reproduce the 2-D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured correctly based on the trap time constant.
AB - The compact model of HIroshima-University Starc Igfet Model (HiSIM)-GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. The model considers all possible charges induced within the device, including the dynamically varying trap density. It is verified that the model can reproduce the 2-D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured correctly based on the trap time constant.
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U2 - 10.1109/TED.2018.2868284
DO - 10.1109/TED.2018.2868284
M3 - Article
AN - SCOPUS:85054251747
SN - 0018-9383
VL - 66
SP - 106
EP - 115
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 1
M1 - 8472902
ER -