HiSIM-GaN: Compact Model for GaN-HEMT with Accurate Dynamic Current-Collapse Reproduction

Yasuhiro Okada, Takeshi Mizoguchi, Yuta Tanimoto, Hideyuki Kikuchihara, Toshiyuki Naka, Wataru Saito, Mitiko Miura-Mattausch, Hans Juergen Mattausch

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The compact model of HIroshima-University Starc Igfet Model (HiSIM)-GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. The model considers all possible charges induced within the device, including the dynamically varying trap density. It is verified that the model can reproduce the 2-D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured correctly based on the trap time constant.

Original languageEnglish
Article number8472902
Pages (from-to)106-115
Number of pages10
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - Jan 2019
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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