TY - GEN
T1 - Highly sensitive terahertz-wave arrayed detector using InAs-HEMT on glass for video-imaging application
AU - Kojima, Hiromu
AU - Kido, Daishi
AU - Kanaya, Haruichi
AU - Ishii, Hiroyuki
AU - Maeda, Tatsuro
AU - Kume, Eiji
AU - Ogura, Mutsuo
AU - Asano, Tanemasa
N1 - Funding Information:
The authors are grateful to Dr. H. Hattori and Dr. W.-H. Chang of AIST and Mr. Y. Mukai of Kyushu University for their useful discussion and technical help. This work was partly supported by JST CREST (JPMJCR1431).
Publisher Copyright:
© 2019 SPIE.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2019
Y1 - 2019
N2 - This paper presents a newly developed square law detector array whose NEP is as low as ∼ 1 pW/Hz0.5 for 1.0 THz waves. The detector array using high electron mobility transistor (HEMT) with InGaAs/InAs/InGaAs double hetero-structured channel has been fabricated. The InAs-HEMT was fabricated on a quartz substrate using the layer transfer technology. Also, an array of square law detectors was developed by applying advanced selective etching, atomic layer deposition, and metallization to the transferred hetero-structured layers. The static analysis revealed that the transistor shows electron mobility as high as 3,200 cm2/Vs and low leakage with subthreshold slope as low as ∼ 100 mV/dec. Detection performance was characterized by directly inputting 1.0 THz waves thorough a THz probe to each of the arrayed detectors. It is also demonstrated that the detection characteristics were well described by the analytical formulae derived from the channel-carrier behavior model. The experimental results suggested that the developed detector array is a promising candidate for imaging application.
AB - This paper presents a newly developed square law detector array whose NEP is as low as ∼ 1 pW/Hz0.5 for 1.0 THz waves. The detector array using high electron mobility transistor (HEMT) with InGaAs/InAs/InGaAs double hetero-structured channel has been fabricated. The InAs-HEMT was fabricated on a quartz substrate using the layer transfer technology. Also, an array of square law detectors was developed by applying advanced selective etching, atomic layer deposition, and metallization to the transferred hetero-structured layers. The static analysis revealed that the transistor shows electron mobility as high as 3,200 cm2/Vs and low leakage with subthreshold slope as low as ∼ 100 mV/dec. Detection performance was characterized by directly inputting 1.0 THz waves thorough a THz probe to each of the arrayed detectors. It is also demonstrated that the detection characteristics were well described by the analytical formulae derived from the channel-carrier behavior model. The experimental results suggested that the developed detector array is a promising candidate for imaging application.
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U2 - 10.1117/12.2510794
DO - 10.1117/12.2510794
M3 - Conference contribution
AN - SCOPUS:85066022289
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII
A2 - Sadwick, Laurence P.
A2 - Yang, Tianxin
PB - SPIE
T2 - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019
Y2 - 4 February 2019 through 7 February 2019
ER -