Highly Efficient Full van der Waals 1D p-Te/2D n-Bi2O2Se Heterodiodes with Nanoscale Ultra-Photosensitive Channels

Weijun Wang, You Meng, Wei Wang, Zhuomin Zhang, Pengshan Xie, Zhengxun Lai, Xiuming Bu, Yezhan Li, Chuntai Liu, Zengbao Yang, Sen Po Yip, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, this downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-van der Waals (vdWs) 1D p-Te/2D n-Bi2O2Se heterodiode with a rationally designed nanoscale ultra-photosensitive channel is reported. Enabled by the dangling bond-free mixed-dimensional vdWs integration, the Te/Bi2O2Se type-II diodes show a high rectification ratio of 3.6 × 104. Operating with 100 mV reverse bias or in a self-power mode, the photodiodes demonstrate excellent photodetection performances, including high responsivities of 130 A W−1 (100 mV bias) and 768.8 mA W−1 (self-power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full-vdWs photodiodes, in which a model based on the in-gap trap-assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light–matter interactions for further performance enhancement of photoelectronic devices.

Original languageEnglish
Article number2203003
JournalAdvanced Functional Materials
Issue number30
Publication statusPublished - Jul 25 2022

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • General Chemistry
  • General Materials Science
  • Electrochemistry
  • Biomaterials


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