Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm

Shojiro Komatsu; Keiji Kurashima; Hisao Kanda; Katsuyuki Okada; Mamoru Mitomo; Yusuke Moriyoshi; Yoshiki Shimuzu; Masaharu Shiratani; Toshiki Nakano; Seiji Samukawa

doi:10.1063/1.1527987

Highly crystalline 5H-polytype of sp³-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm

Shojiro Komatsu
, Keiji Kurashima
, Hisao Kanda
, Katsuyuki Okada
, Mamoru Mitomo
, Yusuke Moriyoshi
, Yoshiki Shimuzu
, Masaharu Shiratani
, Toshiki Nakano
, Seiji Samukawa

Electronic Devices

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A highly crystalline 5H-polytypic form of sp³-bonded boron nitride (BN) was prepared by plasma-packets-assisted pulsed-laser deposition. The structure of the crystallites was confirmed using electron energy loss spectroscopy and transmission electron diffraction. The material proved to have a sharp and dominant band at 225 nm by cathodoluminescence at room temperature.

Original language	English
Pages (from-to)	4547-4549
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	24
DOIs	https://doi.org/10.1063/1.1527987
Publication status	Published - Dec 9 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1527987

Cite this

Komatsu, S., Kurashima, K., Kanda, H., Okada, K., Mitomo, M., Moriyoshi, Y., Shimuzu, Y., Shiratani, M., Nakano, T., & Samukawa, S. (2002). Highly crystalline 5H-polytype of sp³-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm. Applied Physics Letters, 81(24), 4547-4549. https://doi.org/10.1063/1.1527987

Komatsu, S, Kurashima, K, Kanda, H, Okada, K, Mitomo, M, Moriyoshi, Y, Shimuzu, Y, Shiratani, M, Nakano, T & Samukawa, S 2002, 'Highly crystalline 5H-polytype of sp³-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm', Applied Physics Letters, vol. 81, no. 24, pp. 4547-4549. https://doi.org/10.1063/1.1527987

@article{9ede39058066499c818367fd77cd6d4d,

title = "Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm",

abstract = "A highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was prepared by plasma-packets-assisted pulsed-laser deposition. The structure of the crystallites was confirmed using electron energy loss spectroscopy and transmission electron diffraction. The material proved to have a sharp and dominant band at 225 nm by cathodoluminescence at room temperature.",

author = "Shojiro Komatsu and Keiji Kurashima and Hisao Kanda and Katsuyuki Okada and Mamoru Mitomo and Yusuke Moriyoshi and Yoshiki Shimuzu and Masaharu Shiratani and Toshiki Nakano and Seiji Samukawa",

year = "2002",

month = dec,

day = "9",

doi = "10.1063/1.1527987",

language = "English",

volume = "81",

pages = "4547--4549",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition

T2 - An ultraviolet light emitter at 225 nm

AU - Komatsu, Shojiro

AU - Kurashima, Keiji

AU - Kanda, Hisao

AU - Okada, Katsuyuki

AU - Mitomo, Mamoru

AU - Moriyoshi, Yusuke

AU - Shimuzu, Yoshiki

AU - Shiratani, Masaharu

AU - Nakano, Toshiki

AU - Samukawa, Seiji

PY - 2002/12/9

Y1 - 2002/12/9

N2 - A highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was prepared by plasma-packets-assisted pulsed-laser deposition. The structure of the crystallites was confirmed using electron energy loss spectroscopy and transmission electron diffraction. The material proved to have a sharp and dominant band at 225 nm by cathodoluminescence at room temperature.

AB - A highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was prepared by plasma-packets-assisted pulsed-laser deposition. The structure of the crystallites was confirmed using electron energy loss spectroscopy and transmission electron diffraction. The material proved to have a sharp and dominant band at 225 nm by cathodoluminescence at room temperature.

UR - https://www.scopus.com/pages/publications/0037049656

UR - https://www.scopus.com/pages/publications/0037049656#tab=citedBy

U2 - 10.1063/1.1527987

DO - 10.1063/1.1527987

M3 - Article

AN - SCOPUS:0037049656

SN - 0003-6951

VL - 81

SP - 4547

EP - 4549

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Highly crystalline 5H-polytype of sp³-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this