TY - JOUR
T1 - Highly conducting and very thin ZnO
T2 - AI films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase
AU - Itagaki, Naho
AU - Kuwahara, Kazunari
AU - Nakahara, Kenta
AU - Yamashita, Daisuke
AU - Uchida, Giichiro
AU - Koga, Kazunori
AU - Shiratani, Masaharu
PY - 2011/1
Y1 - 2011/1
N2 - We propose a novel method of oxide crystal growth via atomic-additive mediated amorphization. By utilizing this method, solid-phase crystallization (SPC) of ZnO from amorphous phase has been successfully demonstrated via nitrogen atom mediation. The resultant SPC-ZnO films are highly orientated and the crystallinity is higher than that of the films prepared by conventional sputtering. By using the SPC-ZnO as a buffer layer, the resistivity of ZnO:Al (AZO) films is drastically decreased. 20-nm-thick AZO films with a resistivity of 5 × 10- ω cm and an optical transmittance higher than 80% in a wide wavelength range of 400-2500 nm have been obtained.
AB - We propose a novel method of oxide crystal growth via atomic-additive mediated amorphization. By utilizing this method, solid-phase crystallization (SPC) of ZnO from amorphous phase has been successfully demonstrated via nitrogen atom mediation. The resultant SPC-ZnO films are highly orientated and the crystallinity is higher than that of the films prepared by conventional sputtering. By using the SPC-ZnO as a buffer layer, the resistivity of ZnO:Al (AZO) films is drastically decreased. 20-nm-thick AZO films with a resistivity of 5 × 10- ω cm and an optical transmittance higher than 80% in a wide wavelength range of 400-2500 nm have been obtained.
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U2 - 10.1143/APEX.4.011101
DO - 10.1143/APEX.4.011101
M3 - Article
AN - SCOPUS:79251564915
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 1
M1 - 011101
ER -