Highly c-axis oriented LiNb                         0.5                         Ta                         0.5                         O                         3                          thin films on Si substrates fabricated by thermal plasma spray CVD

S. A. Kulinich; J. Shibata; H. Yamamoto; Y. Shimada; K. Terashima; T. Yoshida

doi:10.1016/S0169-4332(01)00523-2

Highly c-axis oriented LiNb _0.5 Ta _0.5 O ₃ thin films on Si substrates fabricated by thermal plasma spray CVD

S. A. Kulinich, J. Shibata, H. Yamamoto, Y. Shimada, K. Terashima, T. Yoshida

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Lithium niobate-tantalate films with the composition LiNb _0.5 Ta _0.5 O ₃ and very high c-axis orientation were grown on (100) and (111) Si substrates by using the thermal plasma spray CVD method. It is demonstrated that the substrate temperature is the key factor governing film orientation and crystallinity. The film direction could be varied from (006) to (012) by controlling the deposition temperature. Under optimal growth conditions, 97% c-textured films could be grown on both thick and very thin intermediate SiO ₂ layers. A (006) rocking-curve full-width at half-maximum value could achieve 3.7° by using the optimal deposition temperature. The growth rate applied was equal to 160-340nm/min.

Original language	English
Pages (from-to)	150-158
Number of pages	9
Journal	Applied Surface Science
Volume	182
Issue number	1-2
DOIs	https://doi.org/10.1016/S0169-4332(01)00523-2
Publication status	Published - Nov 5 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(01)00523-2

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Kulinich, S. A., Shibata, J., Yamamoto, H., Shimada, Y., Terashima, K., & Yoshida, T. (2001). Highly c-axis oriented LiNb _0.5 Ta _0.5 O ₃ thin films on Si substrates fabricated by thermal plasma spray CVD Applied Surface Science, 182(1-2), 150-158. https://doi.org/10.1016/S0169-4332(01)00523-2

Highly c-axis oriented LiNb _0.5 Ta _0.5 O ₃ thin films on Si substrates fabricated by thermal plasma spray CVD . / Kulinich, S. A.; Shibata, J.; Yamamoto, H. et al.
In: Applied Surface Science, Vol. 182, No. 1-2, 05.11.2001, p. 150-158.

Research output: Contribution to journal › Article › peer-review

Kulinich, SA, Shibata, J, Yamamoto, H, Shimada, Y, Terashima, K & Yoshida, T 2001, ' Highly c-axis oriented LiNb _0.5 Ta _0.5 O ₃ thin films on Si substrates fabricated by thermal plasma spray CVD ', Applied Surface Science, vol. 182, no. 1-2, pp. 150-158. https://doi.org/10.1016/S0169-4332(01)00523-2

Kulinich SA, Shibata J, Yamamoto H, Shimada Y, Terashima K, Yoshida T. Highly c-axis oriented LiNb _0.5 Ta _0.5 O ₃ thin films on Si substrates fabricated by thermal plasma spray CVD Applied Surface Science. 2001 Nov 5;182(1-2):150-158. doi: 10.1016/S0169-4332(01)00523-2

Kulinich, S. A. ; Shibata, J. ; Yamamoto, H. et al. / Highly c-axis oriented LiNb _0.5 Ta _0.5 O ₃ thin films on Si substrates fabricated by thermal plasma spray CVD In: Applied Surface Science. 2001 ; Vol. 182, No. 1-2. pp. 150-158.

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title = " Highly c-axis oriented LiNb 0.5 Ta 0.5 O 3 thin films on Si substrates fabricated by thermal plasma spray CVD ",

abstract = " Lithium niobate-tantalate films with the composition LiNb 0.5 Ta 0.5 O 3 and very high c-axis orientation were grown on (100) and (111) Si substrates by using the thermal plasma spray CVD method. It is demonstrated that the substrate temperature is the key factor governing film orientation and crystallinity. The film direction could be varied from (006) to (012) by controlling the deposition temperature. Under optimal growth conditions, 97% c-textured films could be grown on both thick and very thin intermediate SiO 2 layers. A (006) rocking-curve full-width at half-maximum value could achieve 3.7° by using the optimal deposition temperature. The growth rate applied was equal to 160-340nm/min.",

author = "Kulinich, {S. A.} and J. Shibata and H. Yamamoto and Y. Shimada and K. Terashima and T. Yoshida",

note = "Funding Information: We would like to thank Seika Sangyo Ltd., Tokyo, Japan, for their help with the ellipsometric measurements of our samples. We would also like to express our thanks to Mr. H. Nishiyama for his kind assistance in the AFM measurements. S.A.K. is grateful for the support of the Japan Society for the Promotion of Science (JSPS). This work was financially supported by JSPS under the program “Research for the Future” (JSPS-RFTF Grant No. 97R15301). ",

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doi = "10.1016/S0169-4332(01)00523-2",

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T1 - Highly c-axis oriented LiNb 0.5 Ta 0.5 O 3 thin films on Si substrates fabricated by thermal plasma spray CVD

AU - Kulinich, S. A.

AU - Shibata, J.

AU - Yamamoto, H.

AU - Shimada, Y.

AU - Terashima, K.

AU - Yoshida, T.

N1 - Funding Information: We would like to thank Seika Sangyo Ltd., Tokyo, Japan, for their help with the ellipsometric measurements of our samples. We would also like to express our thanks to Mr. H. Nishiyama for his kind assistance in the AFM measurements. S.A.K. is grateful for the support of the Japan Society for the Promotion of Science (JSPS). This work was financially supported by JSPS under the program “Research for the Future” (JSPS-RFTF Grant No. 97R15301).

PY - 2001/11/5

Y1 - 2001/11/5

N2 - Lithium niobate-tantalate films with the composition LiNb 0.5 Ta 0.5 O 3 and very high c-axis orientation were grown on (100) and (111) Si substrates by using the thermal plasma spray CVD method. It is demonstrated that the substrate temperature is the key factor governing film orientation and crystallinity. The film direction could be varied from (006) to (012) by controlling the deposition temperature. Under optimal growth conditions, 97% c-textured films could be grown on both thick and very thin intermediate SiO 2 layers. A (006) rocking-curve full-width at half-maximum value could achieve 3.7° by using the optimal deposition temperature. The growth rate applied was equal to 160-340nm/min.

AB - Lithium niobate-tantalate films with the composition LiNb 0.5 Ta 0.5 O 3 and very high c-axis orientation were grown on (100) and (111) Si substrates by using the thermal plasma spray CVD method. It is demonstrated that the substrate temperature is the key factor governing film orientation and crystallinity. The film direction could be varied from (006) to (012) by controlling the deposition temperature. Under optimal growth conditions, 97% c-textured films could be grown on both thick and very thin intermediate SiO 2 layers. A (006) rocking-curve full-width at half-maximum value could achieve 3.7° by using the optimal deposition temperature. The growth rate applied was equal to 160-340nm/min.

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Highly c-axis oriented LiNb _0.5 Ta _0.5 O ₃ thin films on Si substrates fabricated by thermal plasma spray CVD

Abstract

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