Higherature Annealing of CdZnTe Detectors

J. Suh, S. Hwang, H. Yu, Y. Yoon, Aleksey E. Bolotnikov, Ralph B. James, J. Hong, Kihyun Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle of bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. Observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.

Original languageEnglish
Article number8103821
Pages (from-to)2966-2969
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number12
Publication statusPublished - Dec 2017
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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