High-voltage driver LSI for passive matrix driven electronic paper with 160 tri-level voltage outputs

Reiji Hattori

doi:10.1109/JEC-ECC.2012.6186946

High-voltage driver LSI for passive matrix driven electronic paper with 160 tri-level voltage outputs

Reiji Hattori

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We have succeeded in developing a custom LSI with 160-outputs which supply tri-level voltages as high as 110 V using LDMOS technology for driving a passive-matrix driven electronic paper. The level shifter was designed to suppress the power consumption by employing the new level shifter which needed no DC bias voltage. The LSI chip was thinned to 35 m for direct-mounting onto a flexible display.

Original language	English
Title of host publication	Proceedings of the 2012 Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2012
Pages	1-5
Number of pages	5
DOIs	https://doi.org/10.1109/JEC-ECC.2012.6186946
Publication status	Published - 2012
Event	2012 Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2012 - Alexandria, Egypt Duration: Mar 6 2012 → Mar 9 2012

Other

Other	2012 Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2012
Country/Territory	Egypt
City	Alexandria
Period	3/6/12 → 3/9/12

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1109/JEC-ECC.2012.6186946

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Hattori, R 2012, High-voltage driver LSI for passive matrix driven electronic paper with 160 tri-level voltage outputs. in Proceedings of the 2012 Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2012., 6186946, pp. 1-5, 2012 Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2012, Alexandria, Egypt, 3/6/12. https://doi.org/10.1109/JEC-ECC.2012.6186946

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abstract = "We have succeeded in developing a custom LSI with 160-outputs which supply tri-level voltages as high as 110 V using LDMOS technology for driving a passive-matrix driven electronic paper. The level shifter was designed to suppress the power consumption by employing the new level shifter which needed no DC bias voltage. The LSI chip was thinned to 35 m for direct-mounting onto a flexible display.",

author = "Reiji Hattori",

year = "2012",

doi = "10.1109/JEC-ECC.2012.6186946",

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AB - We have succeeded in developing a custom LSI with 160-outputs which supply tri-level voltages as high as 110 V using LDMOS technology for driving a passive-matrix driven electronic paper. The level shifter was designed to suppress the power consumption by employing the new level shifter which needed no DC bias voltage. The LSI chip was thinned to 35 m for direct-mounting onto a flexible display.

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ER -

High-voltage driver LSI for passive matrix driven electronic paper with 160 tri-level voltage outputs

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