High voltage and high switching frequency power-supplies using a GaN-HEMT

Wataru Saito; Ichiro Omura; Tomokazu Domon; Kunio Tsuda

doi:10.1109/CSICS.2006.319947

High voltage and high switching frequency power-supplies using a GaN-HEMT

Wataru Saito, Ichiro Omura, Tomokazu Domon, Kunio Tsuda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

This paper reports 13.56 MHz and 27.1 MHz class-E amplifiers with a high voltage GaN-HEMT as the main switching device showing the possibility of GaN-HEMTs in high frequency switching power applications such as RF power-supply applications. The 380 V/1.9 A GaN power-HEMT was designed and fabricated for high-voltage power electronics applications. The demonstrated 13.56 MHz circuit achieved the output power of 13.4 W and the power efficiency of 91 % under a drain-peak voltage as high as 330 V. For a 27.1 MHz circuit, the output power was 13.8 W with the efficiency of 89.6 %. These results show that high voltage GaN-devices are suitable for high frequency switching applications under high DC input voltages of over 100 V.

Original language	English
Title of host publication	2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS
Pages	253-256
Number of pages	4
DOIs	https://doi.org/10.1109/CSICS.2006.319947
Publication status	Published - Dec 1 2006
Externally published	Yes
Event	2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS - San Antonio, TX, United States Duration: Nov 12 2006 → Nov 15 2006

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)	1550-8781

Conference

Conference	2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS
Country/Territory	United States
City	San Antonio, TX
Period	11/12/06 → 11/15/06

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1109/CSICS.2006.319947

Cite this

High voltage and high switching frequency power-supplies using a GaN-HEMT. / Saito, Wataru; Omura, Ichiro; Domon, Tomokazu et al.
2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS. 2006. p. 253-256 4110034 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saito, W, Omura, I, Domon, T & Tsuda, K 2006, High voltage and high switching frequency power-supplies using a GaN-HEMT. in 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS., 4110034, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, pp. 253-256, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS, San Antonio, TX, United States, 11/12/06. https://doi.org/10.1109/CSICS.2006.319947

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abstract = "This paper reports 13.56 MHz and 27.1 MHz class-E amplifiers with a high voltage GaN-HEMT as the main switching device showing the possibility of GaN-HEMTs in high frequency switching power applications such as RF power-supply applications. The 380 V/1.9 A GaN power-HEMT was designed and fabricated for high-voltage power electronics applications. The demonstrated 13.56 MHz circuit achieved the output power of 13.4 W and the power efficiency of 91 % under a drain-peak voltage as high as 330 V. For a 27.1 MHz circuit, the output power was 13.8 W with the efficiency of 89.6 %. These results show that high voltage GaN-devices are suitable for high frequency switching applications under high DC input voltages of over 100 V.",

author = "Wataru Saito and Ichiro Omura and Tomokazu Domon and Kunio Tsuda",

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AU - Saito, Wataru

AU - Omura, Ichiro

AU - Domon, Tomokazu

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PY - 2006/12/1

Y1 - 2006/12/1

N2 - This paper reports 13.56 MHz and 27.1 MHz class-E amplifiers with a high voltage GaN-HEMT as the main switching device showing the possibility of GaN-HEMTs in high frequency switching power applications such as RF power-supply applications. The 380 V/1.9 A GaN power-HEMT was designed and fabricated for high-voltage power electronics applications. The demonstrated 13.56 MHz circuit achieved the output power of 13.4 W and the power efficiency of 91 % under a drain-peak voltage as high as 330 V. For a 27.1 MHz circuit, the output power was 13.8 W with the efficiency of 89.6 %. These results show that high voltage GaN-devices are suitable for high frequency switching applications under high DC input voltages of over 100 V.

AB - This paper reports 13.56 MHz and 27.1 MHz class-E amplifiers with a high voltage GaN-HEMT as the main switching device showing the possibility of GaN-HEMTs in high frequency switching power applications such as RF power-supply applications. The 380 V/1.9 A GaN power-HEMT was designed and fabricated for high-voltage power electronics applications. The demonstrated 13.56 MHz circuit achieved the output power of 13.4 W and the power efficiency of 91 % under a drain-peak voltage as high as 330 V. For a 27.1 MHz circuit, the output power was 13.8 W with the efficiency of 89.6 %. These results show that high voltage GaN-devices are suitable for high frequency switching applications under high DC input voltages of over 100 V.

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High voltage and high switching frequency power-supplies using a GaN-HEMT

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