TY - GEN
T1 - High throughput SiC wafer polishing with good surface morphology
AU - Kato, Tomohisa
AU - Wada, Keisuke
AU - Hozomi, Eiji
AU - Taniguchi, Hiroyoshi
AU - Miura, Tomonori
AU - Nishizawa, Shin Ichi
AU - Arai, Kazuo
N1 - Publisher Copyright:
© (2007) Trans Tech Publications, Switzerland.
PY - 2007
Y1 - 2007
N2 - We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface. The polishing consists of three process, wafer grinding, lapping and chemical mechanical polishing (CMP), which are completed in shortest about 200 minutes in total for 2 inch wafer. Specimens of 4H- and 6H-SiC were provided from slicing single crystal as wafers oriented (0001) with 0 or 8 degrees offset angle toward to <1120>. By the first grinding using a diamond whetstone wheel, we realized flat surface on the wafers with small TTV error of 1 µm in 15 minutes. After second process of lapping, the wafers were finished by CMP using colloidal silica slurry. AFM observation showed not only scratch-free surface but also atomic steps on the wafers after CMP. Rms marks extremely flat value of 0.08 nm in 10 µm square area.
AB - We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface. The polishing consists of three process, wafer grinding, lapping and chemical mechanical polishing (CMP), which are completed in shortest about 200 minutes in total for 2 inch wafer. Specimens of 4H- and 6H-SiC were provided from slicing single crystal as wafers oriented (0001) with 0 or 8 degrees offset angle toward to <1120>. By the first grinding using a diamond whetstone wheel, we realized flat surface on the wafers with small TTV error of 1 µm in 15 minutes. After second process of lapping, the wafers were finished by CMP using colloidal silica slurry. AFM observation showed not only scratch-free surface but also atomic steps on the wafers after CMP. Rms marks extremely flat value of 0.08 nm in 10 µm square area.
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U2 - 10.4028/www.scientific.net/MSF.556-557.753
DO - 10.4028/www.scientific.net/MSF.556-557.753
M3 - Conference contribution
AN - SCOPUS:38449087687
SN - 0878494421
SN - 9780878494422
SN - 9780878494422
T3 - Materials Science Forum
SP - 753
EP - 756
BT - Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
A2 - Wright, N.
A2 - Johnson, C.M.
A2 - Vassilevski, K.
A2 - Nikitina, I.
A2 - Horsfall, A.
PB - Trans Tech Publications Ltd
T2 - 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006
Y2 - 3 September 2006 through 7 September 2006
ER -