Abstract
A novel side-illuminated receiver OEIC, consisting of a waveguide p-i-n photodiode and an InAIAs-InGaAs-HEMT transimpedance amplifier, was fabricated by a dry-etching based process. The OEIC has a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 Ω, which enables it to receive a 10-Gb/s NRZ signal. These results represent a major advance in achieving ultrahigh-speed side-illuminated OEIC's for long-wavelength optical interconnection and transmission systems.
Original language | English |
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Pages (from-to) | 685-687 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 7 |
Issue number | 6 |
DOIs | |
Publication status | Published - Jun 1995 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering