High-resolution X-ray diffraction of silicon at low temperatures

Z. Lu, K. Munakata, A. Kohno, Y. Soejima, A. Okazaki

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he temperature dependence of the lattice spacing of silicon (440) and (444) has been measured by means of X-ray diffraction according to the Bond method coupled with a quadruple-crystal monochromator; measurements were repeated over several thermal cycles in a range 300-20 K, when the specimen crystal was kept in the state of a perfect crystal. It is found that the spacing of (440) shows normal behaviour, while that of (444) is not a unique function of temperature, depending on specimens and thermal treatments at low temperatures. Simultaneous measurements of the four {444} spacings show that the lattice symmetry, in the temperature region of negative thermal expansion, slowly varies to trigonal through an unstable stage. The results together with those of related X-ray diffraction experiments such as that carried out with external uniaxial stresses suggest an occurrence of phonon-mediated atomic rearrangement at the low temperature.

Original languageEnglish
Pages (from-to)305-311
Number of pages7
JournalNuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics
Issue number2-4
Publication statusPublished - 1997

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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