High-resolution capability of optical near-field imprint lithography

T. Yatsui, Y. Nakajima, W. Nomura, M. Ohtsu

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)


    We propose a novel method to increase the resolution of imprint lithography by introducing strong localization of the optical near-field intensity, depending on the mold structure. By optimizing the thickness of the metallic film on a SiO2 line-and-space (LS) mold without a sidewall coating, we confirmed that the optical near-field strongly localizes at the edge of the mold, using a finite-difference time-domain calculation method. Based on the calculated results, we performed optical near-field imprint lithography using a mold with metallized (20-nm-thick Al without a sidewall coating) SiO2 LS with a 300-nm half-pitch that was 200-nm deep with illumination using the g-line (λ=436 nm), and obtained features as narrow as 50 nm wide.

    Original languageEnglish
    Pages (from-to)265-267
    Number of pages3
    JournalApplied Physics B: Lasers and Optics
    Issue number1-2
    Publication statusPublished - Jul 2006

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)


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