High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

William Makoto Nakamura; Hidefumi Matsuzaki; Hiroshi Sato; Yuuki Kawashima; Kazunori Koga; Masaharu Shiratani

doi:10.1016/j.surfcoat.2010.07.081

High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

William Makoto Nakamura, Hidefumi Matsuzaki, Hiroshi Sato, Yuuki Kawashima, Kazunori Koga, Masaharu Shiratani

Electronic Devices

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7×10¹⁵cm^-3 in stabilized defect density at a rate of 3.0nm/s and better film thickness uniformity within 5% in an area of 4cm in diameter.

Original language	English
Pages (from-to)	S241-S245
Journal	Surface and Coatings Technology
Volume	205
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.surfcoat.2010.07.081
Publication status	Published - Dec 25 2010

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.surfcoat.2010.07.081

Cite this

@article{29e59a8c8688478da1b1ee3eba8c377d,

title = "High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells",

abstract = "We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7×1015cm-3 in stabilized defect density at a rate of 3.0nm/s and better film thickness uniformity within 5% in an area of 4cm in diameter.",

author = "Nakamura, {William Makoto} and Hidefumi Matsuzaki and Hiroshi Sato and Yuuki Kawashima and Kazunori Koga and Masaharu Shiratani",

year = "2010",

month = dec,

day = "25",

doi = "10.1016/j.surfcoat.2010.07.081",

language = "English",

volume = "205",

pages = "S241--S245",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

number = "SUPPL. 1",

}

TY - JOUR

T1 - High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

AU - Nakamura, William Makoto

AU - Matsuzaki, Hidefumi

AU - Sato, Hiroshi

AU - Kawashima, Yuuki

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2010/12/25

Y1 - 2010/12/25

N2 - We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7×1015cm-3 in stabilized defect density at a rate of 3.0nm/s and better film thickness uniformity within 5% in an area of 4cm in diameter.

AB - We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7×1015cm-3 in stabilized defect density at a rate of 3.0nm/s and better film thickness uniformity within 5% in an area of 4cm in diameter.

UR - http://www.scopus.com/inward/record.url?scp=78649963247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649963247&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2010.07.081

DO - 10.1016/j.surfcoat.2010.07.081

M3 - Article

AN - SCOPUS:78649963247

SN - 0257-8972

VL - 205

SP - S241-S245

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - SUPPL. 1

ER -

High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this