TY - GEN
T1 - High rate deposition of cluster-suppressed amorphous silicon films deposited using a multi-hollow discharge plasma CVD
AU - Koga, Kazunori
AU - Sato, Hiroshi
AU - Kawashima, Yuuki
AU - Nakamura, William M.
AU - Shiratani, Masaharu
PY - 2010
Y1 - 2010
N2 - We have examined effects of gas velocity and gas pressure on a deposition rate of hydrogenated amorphous silicon (a-Si:H) films and on a volume fraction of clusters in the films using a multi-hollow discharge plasma CVD method. The maximum deposition rate realized for each pressure exponentially increases with decreasing the pressure from 1.0 Torr to 0.1 Torr, whereas the volume fraction of clusters very slightly increases with increasing the deposition rate. Based on the results, we have succeeded in depositing highly stable a-Si:H films of 4.9 × 1015cm-3 in a stabilized defect density at a rate of 3.0nm/s using the method.
AB - We have examined effects of gas velocity and gas pressure on a deposition rate of hydrogenated amorphous silicon (a-Si:H) films and on a volume fraction of clusters in the films using a multi-hollow discharge plasma CVD method. The maximum deposition rate realized for each pressure exponentially increases with decreasing the pressure from 1.0 Torr to 0.1 Torr, whereas the volume fraction of clusters very slightly increases with increasing the deposition rate. Based on the results, we have succeeded in depositing highly stable a-Si:H films of 4.9 × 1015cm-3 in a stabilized defect density at a rate of 3.0nm/s using the method.
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M3 - Conference contribution
AN - SCOPUS:78650398183
SN - 9781605111834
T3 - Materials Research Society Symposium Proceedings
SP - 217
EP - 222
BT - Photovoltaic Materials and Manufacturing Issues II
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 2 December 2009
ER -