TY - JOUR
T1 - High quality single-crystalline Ge-rich SiGe on insulator structures by Si-doping controlled rapid melting growth
AU - Tanaka, Takanori
AU - Toko, Kaoru
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2010/3
Y1 - 2010/3
N2 - Ge-rich SiGe-on-insulator (SGOI) is required for high speed transistors. We investigated the effects of Si doping on the growth characteristics of SGOI produced by rapid melting growth. The aggregation of Ge, observed for pure Ge wide stripes (>5 μm), can be suppressed by Si doping. Si doping causes rotational growth of SiGe stripes, but this can be controlled using lower Si doping concentrations and growth temperatures. Singlecrystalline Ge-rich SGOI (Ge concentration > 96%) that is wide enough (15 μm) for device fabrication is thus produced. Transmission electron microscopy reveals that the Ge-rich SGOI does not contain dislocations or stacking faults.
AB - Ge-rich SiGe-on-insulator (SGOI) is required for high speed transistors. We investigated the effects of Si doping on the growth characteristics of SGOI produced by rapid melting growth. The aggregation of Ge, observed for pure Ge wide stripes (>5 μm), can be suppressed by Si doping. Si doping causes rotational growth of SiGe stripes, but this can be controlled using lower Si doping concentrations and growth temperatures. Singlecrystalline Ge-rich SGOI (Ge concentration > 96%) that is wide enough (15 μm) for device fabrication is thus produced. Transmission electron microscopy reveals that the Ge-rich SGOI does not contain dislocations or stacking faults.
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U2 - 10.1143/APEX.3.031301
DO - 10.1143/APEX.3.031301
M3 - Article
AN - SCOPUS:77949787226
SN - 1882-0778
VL - 3
JO - Applied Physics Express
JF - Applied Physics Express
IS - 3
M1 - 031301
ER -