High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

Masanobu Miyao, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh

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91 Citations (Scopus)


Single-crystal Ge on a transparent insulating substrate is desired to achieve advanced thin-film transistors (TFTs) with high speed operation. We have developed the rapid-melting-growth process of amorphous Ge by using polycrystalline Si islands as the growth seed. High-quality and dominantly (100)-oriented single-crystal Ge stripes with 400 μm length are demonstrated on quartz substrates. The temperature dependence of the electrical conductivity shows a high hole mobility of 1040 cm2 /V s. This method opens up a possibility of Ge-channel TFT with the high carrier mobility.

Original languageEnglish
Article number022115
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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