TY - JOUR
T1 - High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth
AU - Tojo, Yuki
AU - Matsumura, Ryo
AU - Yokoyama, Hiroyuki
AU - Kurosawa, Masashi
AU - Toko, Kaoru
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
The authors wish to thank Dr. I. Mizushima of Toshiba Corporation for stimulating discussions during the course of this study. M.K. wishes to thank JSPS research program for young scientists. A part of this work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sport, Science and Technology in Japan.
PY - 2013/3/4
Y1 - 2013/3/4
N2 - Laterally and vertically modulated SiGe-on-insulator (SGOI) structures are essential to integrate functional device-arrays with various energy-band-gaps and/or lattice-constants. We develop the temperature-modulated successive rapid-melting-growth (RMG) method, where Si-concentration dependent RMG processing is combined with non-destructive crystallinity-analysis. First, SGOI is formed by segregation-controlled RMG of SiGe by using Si-substrate as crystalline-seed. Polarized-Raman-scattering measurements non-destructively reveal the lateral-epitaxial-growth of SGOI with graded SiGe-concentration profiles. Second, Ge-on-insulator (GOI) is stacked on SGOI by using SGOI as crystalline-seed, where RMG temperature is selected between the melting-points of Ge and underlying SGOI. This achieves defect-free, multiply-stacked GOI on graded-SGOI structure, which demonstrates 3-dimensionally modulated SiGe-concentration profiles on Si-platform.
AB - Laterally and vertically modulated SiGe-on-insulator (SGOI) structures are essential to integrate functional device-arrays with various energy-band-gaps and/or lattice-constants. We develop the temperature-modulated successive rapid-melting-growth (RMG) method, where Si-concentration dependent RMG processing is combined with non-destructive crystallinity-analysis. First, SGOI is formed by segregation-controlled RMG of SiGe by using Si-substrate as crystalline-seed. Polarized-Raman-scattering measurements non-destructively reveal the lateral-epitaxial-growth of SGOI with graded SiGe-concentration profiles. Second, Ge-on-insulator (GOI) is stacked on SGOI by using SGOI as crystalline-seed, where RMG temperature is selected between the melting-points of Ge and underlying SGOI. This achieves defect-free, multiply-stacked GOI on graded-SGOI structure, which demonstrates 3-dimensionally modulated SiGe-concentration profiles on Si-platform.
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U2 - 10.1063/1.4794409
DO - 10.1063/1.4794409
M3 - Article
AN - SCOPUS:84875186017
SN - 0003-6951
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 9
M1 - 092102
ER -