Abstract
High pressure Raman scattering study has been performed in LaNbO4and NdNbO4. It has been found that the corresponding low-frequency Raman lines in LaNbO4and NdNbO4show almost the same pressure dependence. We have also found that frequency of all the Raman lines of NdNbO4 and LaNbO4obeys the same dependence on Tc - T where Tcis the respective transition temperature.
Original language | English |
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Pages (from-to) | 25-27 |
Number of pages | 3 |
Journal | Ferroelectrics |
Volume | 96 |
Issue number | 1 |
DOIs | |
Publication status | Published - Aug 1 1989 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics