TY - JOUR
T1 - High pressure-high temperature seeded growth of GaN on 1 in sapphire/GaN templates
T2 - Analysis of convective transport
AU - Bockowski, M.
AU - Strak, P.
AU - Kempisty, P.
AU - Grzegory, I.
AU - Krukowski, S.
AU - Lucznik, B.
AU - Porowski, S.
N1 - Funding Information:
This work was supported by Polish Committee of Scientific Research Grant No. R003601.
PY - 2007/9/15
Y1 - 2007/9/15
N2 - Seeded growth of GaN on 1 in sapphire/GaN templates by high-pressure solution method is presented. Five crystallization runs at the same growth conditions (temperatures, supercooling, nitrogen pressure, time) but different in geometry are described in details. The finite element calculation is used for modeling the convective transport in the liquid gallium. The stream lines, convectional flow velocity vectors and isotherm lines in liquid metal are determined based on experimentally measured temperatures in the crucible wall. The influence of the seed and the baffle for convection in liquid metal is analyzed in details.
AB - Seeded growth of GaN on 1 in sapphire/GaN templates by high-pressure solution method is presented. Five crystallization runs at the same growth conditions (temperatures, supercooling, nitrogen pressure, time) but different in geometry are described in details. The finite element calculation is used for modeling the convective transport in the liquid gallium. The stream lines, convectional flow velocity vectors and isotherm lines in liquid metal are determined based on experimentally measured temperatures in the crucible wall. The influence of the seed and the baffle for convection in liquid metal is analyzed in details.
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U2 - 10.1016/j.jcrysgro.2007.07.004
DO - 10.1016/j.jcrysgro.2007.07.004
M3 - Article
AN - SCOPUS:34548508210
SN - 0022-0248
VL - 307
SP - 259
EP - 267
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2
ER -