High power SOFC using LSGM film on NiFe porous bi-metal substrate

Y. W. Ju, H. Eto, T. Inagaki, T. Ishihara

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    15 Citations (Scopus)

    Abstract

    Sr and Mg doped LaGaO3 (LSGM) thin film was prepared on NiO-Fe2O3 bi-metal substrate by Pulsed Laser Deposition (PLD) method. Substrate preparation conditions were studied at different sintering temperatures in order to optimize the preparation condition for dense disk with smooth surface. By the thermal reduction, the substrate was changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate were also studied at different reduction temperatures and a suitable reduction temperature exists at 973 K for porous metal substrate. Stoichiometric composition of LSGM film was successfully prepared by optimal deposition parameter and target composition. Structure of the deposited film changed from amorphous to crystalline perovskite during annealing at 1073 K for 2 h. Sm 0.5Sr0.5CoO3 was prepared as cathode by slurry coating method. The maximum power density (MPD) achieved a value of 1.6 and 0.9 W/cm2 at 973 and 873 K, respectively, on porous Ni-Fe metal substrate. Even at 673 K, MPD of 0.1 W/cm2 was achieved.

    Original languageEnglish
    Title of host publicationECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI)
    Pages719-726
    Number of pages8
    Edition2 PART 1
    DOIs
    Publication statusPublished - 2009
    Event11th International Symposium on Solid Oxide Fuel Cells (SOFC-XI)- 216th ECS Meeting - Vienna, Austria
    Duration: Oct 4 2009Oct 9 2009

    Publication series

    NameECS Transactions
    Number2 PART 1
    Volume25
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other11th International Symposium on Solid Oxide Fuel Cells (SOFC-XI)- 216th ECS Meeting
    Country/TerritoryAustria
    CityVienna
    Period10/4/0910/9/09

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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