High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-μm InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE

Hiroaki Chida, Kiich Hamamoto, Kazuo Fukagai, Takashi Miyazaki, Shin Ishikawa

Research output: Contribution to journalConference articlepeer-review

Abstract

Narrow ridge waveguide 0.98-μm InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW.

Original languageEnglish
Pages (from-to)165-166
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA
Duration: Sept 19 1994Sept 23 1994

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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