High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology

K. Makihira; M. Yoshii; T. Asano

High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology

K. Makihira, M. Yoshii, T. Asano

Center for Japan-Egypt Cooperation in Science and Technology（E-JUST Center）

Research output: Contribution to conference › Paper › peer-review

4 Citations (Scopus)

Abstract

The metal imprint technology was found to be effective in the preparation of large grains of silicon at controlled sites. Thin film transistors (TFT) fabricated by this technique showed field effect mobility upto 400cm²/Vs. Superior performance and uniform characteristics were obtained by growing the channel in a single-grain.

Original language	English
Pages	189-190
Number of pages	2
Publication status	Published - Jan 1 2001
Event	Device Research Conference (DRC) - Notre Dame, IN, United States Duration: Jun 25 2001 → Jun 27 2001

Other

Other	Device Research Conference (DRC)
Country/Territory	United States
City	Notre Dame, IN
Period	6/25/01 → 6/27/01

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

@conference{fec13178097b45f9a39f63f4074e9e4d,

title = "High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology",

abstract = "The metal imprint technology was found to be effective in the preparation of large grains of silicon at controlled sites. Thin film transistors (TFT) fabricated by this technique showed field effect mobility upto 400cm2/Vs. Superior performance and uniform characteristics were obtained by growing the channel in a single-grain.",

author = "K. Makihira and M. Yoshii and T. Asano",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "189--190",

note = "Device Research Conference (DRC) ; Conference date: 25-06-2001 Through 27-06-2001",

}

TY - CONF

T1 - High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology

AU - Makihira, K.

AU - Yoshii, M.

AU - Asano, T.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The metal imprint technology was found to be effective in the preparation of large grains of silicon at controlled sites. Thin film transistors (TFT) fabricated by this technique showed field effect mobility upto 400cm2/Vs. Superior performance and uniform characteristics were obtained by growing the channel in a single-grain.

AB - The metal imprint technology was found to be effective in the preparation of large grains of silicon at controlled sites. Thin film transistors (TFT) fabricated by this technique showed field effect mobility upto 400cm2/Vs. Superior performance and uniform characteristics were obtained by growing the channel in a single-grain.

UR - http://www.scopus.com/inward/record.url?scp=0034875658&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034875658&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034875658

SP - 189

EP - 190

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology

Abstract

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All Science Journal Classification (ASJC) codes

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