TY - JOUR
T1 - High performance all solution processed oxide thin-film transistor via photo-induced semiconductor-to-conductor transformation of a-InZnO
AU - Bermundo, Juan Paolo S.
AU - Kulchaisit, Chaiyanan
AU - Corsino, Dianne C.
AU - Syairah, Aimi
AU - Fujii, Mami N.
AU - Ikenoue, Hiroshi
AU - Ishikawa, Yasuaki
AU - Uraoka, Yukiharu
N1 - Funding Information:
The authors gratefully acknowledge Nissan Chemical Corporation for providing the InZnO precursors and the NAIST Support Foundation for the funding received.
Publisher Copyright:
© 2019 SID.
PY - 2019
Y1 - 2019
N2 - We report the development of high performance all-solution processed oxide thin-film transistors (TFT) via selective photo-induced semiconductor-to-conductor transformation of a-InZnO. This simple method enables TFT fabrication through deposition of three main layers without additional source, drain, and gate deposition. This method has a large potential for high throughput roll-to-roll fabrication.
AB - We report the development of high performance all-solution processed oxide thin-film transistors (TFT) via selective photo-induced semiconductor-to-conductor transformation of a-InZnO. This simple method enables TFT fabrication through deposition of three main layers without additional source, drain, and gate deposition. This method has a large potential for high throughput roll-to-roll fabrication.
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U2 - 10.1002/sdtp.12946
DO - 10.1002/sdtp.12946
M3 - Conference article
AN - SCOPUS:85074616988
SN - 0097-966X
VL - 50
SP - 422
EP - 425
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
IS - Book 1
T2 - SID Symposium, Seminar, and Exhibition 2019, Display Week 2019
Y2 - 12 May 2019 through 17 May 2019
ER -