High n-type Sb dopant activation in Ge-rich poly-Ge_1-xSn_x layers on SiO₂ using pulsed laser annealing in flowing water

Physics

• Ratios 100%
• Water 100%
• Electron Density 100%
• Melting Point 50%
• Atoms 50%
• Growth 50%
• Annealing 50%
• Region 50%
• Solid State 50%
• Solubility 50%
• Polycrystalline 50%
• Pulsed Laser 50%
• Laser Annealing 50%
• Integrated Circuit 50%
• Electron Mobility 50%

Material Science

• Carrier Concentration 100%
• Doping (Additives) 100%
• Laser Pulse 100%
• Electron Mobility 50%
• Devices 50%
• Crystalline Material 50%
• Solid 50%
• Flexible Substrate 50%
• Amorphous Material 50%