@article{a951090516e343ee8e6663102d3915a6,
title = "High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water",
abstract = "Heavy n-type doping in polycrystalline Ge (poly-Ge) is still under development owing to the low solid solubility and the low activation ratio of group-V dopants in Ge. To solve this problem, we have investigated ultra-short (55 ns) laser pulse annealing in flowing water for Sb-doped amorphous Ge1-xSnx layers (x ≈ 0.02) on SiO2. It is found that fully melting a Ge1-xSnx layer down to the Ge1-xSnx/SiO2 interface leads to a large grained (∼0.8 μmη) growth, resulting in not only a high electrical activation ratio (∼60%) of Sb atoms in the polycrystals but also a high electron density around 1020 cm-3. As a result, the electron mobility in the Ge-rich poly-Ge1-xSnx layers exceeds that in single-crystalline Si even in the region of a high electron density around 1020 cm-3. The low thermal budget process opens up the possibility for developing Ge1-xSnx based devices fabricated on 3D integrated circuits as well as flexible substrates.",
author = "Kouta Takahashi and Masashi Kurosawa and Hiroshi Ikenoue and Mitsuo Sakashita and Osamu Nakatsuka and Shigeaki Zaima",
note = "Funding Information: The authors wish to thank Gigaphoton Inc. for providing the KrF excimer laser under collaborative work with the Department of Gigaphoton Next GLP at Kyushu University and Eiji Ikenaga of Nagoya University for help with the synchrotron radiation experiments. The HAXPES measurements were carried out at BL47XU in SPring-8 with the approval of JASRI (Proposal Nos. 2016A0109 and 2016B0109). This work was partly supported by Grants-in-Aid for Scientific Research (S) (No. 26220605) and Young Scientists (A) (No. 17H04919) from the JSPS in Japan, PRESTO (No. JPMJPR15R2) from the JST in Japan, and a research Grant of Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development from the MEXT in Japan. K.T. acknowledges JSPS Research Fellowships for Young Scientists. Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = feb,
day = "5",
doi = "10.1063/1.4997369",
language = "English",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",
}